| Issue |
RAIRO-Oper. Res.
Volume 57, Number 4, July-August 2023
Recent developments of operations research and data sciences
|
|
|---|---|---|
| Page(s) | 2197 - 2207 | |
| DOI | https://doi.org/10.1051/ro/2022187 | |
| Published online | 15 September 2023 | |
An hybrid finite element method for a quasi-variational inequality modeling a semiconductor
1
Laboratoire de Mathématiques Jean Leray UFR Sciences et Techniques Nantes Université, 2 rue de la Houssinière, BP 81227, 44322 Nantes Cedex 3, France
2
Equipe de Mathématiques et Interactions, Université Sultan Moulay Slimane, Béni-Mella, Maroc
* Corresponding author: Abdeljalil.Nachaoui@univ-nantes.fr
Received:
27
December
2021
Accepted:
22
October
2022
A problem of determining the characteristics of a semiconductor can be reduced to the study of the quasi-variational inequality, (J. Abouchabaka, R. Aboulaïch, A. Nachaoui and A. Souissi, COMPEL 18 (1999) 143–164.) where the obstacle M(u) is the solution of an elliptic problem depending on u. We present here an hybrid finite element method for the computation of obstacle M(u) and we discuss some numerical aspects appearing in its approximation.
Mathematics Subject Classification: 65N22 / 35Q81 / 35J66 / 90C53
Key words: Semiconductor device / quasi-variational inequality / finite elements method / topological degree
© The authors. Published by EDP Sciences, ROADEF, SMAI 2023
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